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This paper presents a new continually-stepped variable gain low-noise-amplifier (CSVG-LNA) for millimeter-wave (mm-wave) 5G communications. The proposed variable-gain functionality in a two-stage LNA is achieved by incorporating a tunable-transformer at the 2nd-stage. The tunability in coupling-coefficient of the transformer allows to change the output matching of the LNA in a continuous fashion thus enabling a design of CSVG-LNA. The proposed CSVG-LNA alleviates high power consumption and large noise-figure (NF) variation problems in traditional approaches. To validate the proposed idea, we fabricated a CSVG-LNA in 65-nm CMOS process. The CSVG-LNA achieves measured 6.2dB of gain-tunability range while producing 18.2dB of peak S21 and <;4.1dB of NF 28GHz. Further, the NF variation is only ~0.2dB across the entire 6.2dB gain-tuning range. The 3dB bandwidth of CSVG-LNA is about 12GHz (22-34GHz) while it consumes only 9.8mW of dc power. The CSVG-LNA occupies a compact core area of 0.2mm2. The proposed CSVG-LNA achieves 1.5X improvement in FoM in comparison to state-of-the-arts mm-wave variable-gain CMOS LNAs. 

This paper presents a dual-band RF rectifying circuit for wireless power transmission at 1.17 GHz and 2.4 GHz. A dual-band harmonic-tuned inverse-class F/class-F mode power amplifier using a 10 W GaN device has been utilized to implement the proposed rectifier with an on-board coupler and phase shifter. The matching circuit is precisely designed so that the circuit operates in inverse class F and class F mode in the lower and upper frequency bands using dual-band harmonic tuning, respectively. Measurement results show that the rectifier circuit has 78% and 76% efficiencies at 1.17 GHz and 2.4 GHz frequency bands, respectively. To the best of the authors' knowledge, this rectifier is the first demonstration of a dual-band harmonic-tuned synchronous rectifier using a GaN HEMT device with an integrated coupler and phase-shifter for a watt-level RF input power.